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CY20AAH-8F
Nch IGBT for Strobe Flasher
REJ03G0509-0200 Preliminary Rev.2.00 Nov 29, 2005
Features
* VCES: 400 V * ICM: 130 A * Drive voltage: 2.5 V
Outline
RENESAS Package code: PRSP0008DA-B (Package name: SOP-8 <8P2S-B>)
1 5 8 4 3 1 4 5 6 2 7 8 1, 2 : Emitter 3 : Emitter (for the gate drive) 4 : Gate 5, 6, 7, 8 : Collector
Note:
PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3)
Applications
Strobe flasher for cameras
Maximum Ratings
(Tc = 25C)
Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings 400 4 6 130 - 40 to +150 - 40 to +150 Unit V V V A C C Conditions VGE = 0 V VCE = 0 V VCE = 0 V, tw = 10 s CM = 400 F (see performance curve)
Rev.2.00,
Nov 29, 2005,
page 1 of 4
CY20AAH-8F
Electrical Characteristics
(Tj = 25C)
Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 -- -- 0.4 -- -- Typ. -- -- -- 0.6 3.5 5500 Max. -- 10 10 1.2 7.0 -- Unit V A A V V pF Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = 6 V, VCS = 0 V IC = 1 mA, VCE = 10 V IC = 130 A, VGE = 2.5 V VCE = 25 V, VGS = 0 V, f = 1MHz
Performance Curves
Maximum Collector Current vs. Gate - Emitter Voltage
160
Pulse Collector Current ICP (A)
TC = 70C 140 CM = 400 F RG = 68 120 100 80 60 40 20 0 0 1 2 3 4 5 6
Gate - Emitter Voltage VGE (V)
Rev.2.00,
Nov 29, 2005,
page 2 of 4
CY20AAH-8F
Application Example
VCM
Trigger Transformer
Xe Tube
CM
+ -
8
7
6
5
VGG
Control Signal
RD3CYD08 (IGBT Drive IC)
1
2
3
4
Maximum operation conditions VCM = 350 V ICP = 130 A CM = 400 F VGE = 2.5 V
Precautions on Usage
1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protects the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ s. In general, when RG(off) = 68 , it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pin 1 and 2 which a large current flow are given to the device as the device signal emitter, the device may be damaged due to large current since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (Ixe 130 A: full luminescence condition) of main capacitor. Repetition period under full luminescence conditions is over 3 seconds. 5. Total operation hours applied to the Gate-Emitter voltage must be within 5,000 hours when VGE is driven at 4 V.
Rev.2.00,
Nov 29, 2005,
page 3 of 4
CY20AAH-8F
Package Dimensions
Package Name SOP-8 JEITA Package Code P-SOP8-4.4x5-1.27 RENESAS Code PRSP0008DA-B Previous Code 8P2S-B MASS[Typ.] 0.07g
8
5
HE
*1
E
F
NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
1 Index mark 4
c
Reference Dimension in Millimeters Symbol
*2
D
A2
A1
*3 e y
bp
D E A2 A1 A bp c HE e y L
Detail F
Nom Max 5.0 5.2 4.4 4.6 1.5 0.1 0.2 0 1.8 0.35 0.4 0.5 0.13 0.15 0.2 0 10 5.7 6.0 6.3 1.12 1.27 1.42 0.1 0.2 0.4 0.6
Min 4.8 4.2
A
Order Code
Lead form Standard packing Quantity Standard order code Standard order code example CY20AAH-8F-T13
Surface-mounted type Taping 3000 Type name - T +Direction (1 or 2)+3 Note: Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov 29, 2005,
page 4 of 4
L
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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